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Compensation of mobile‐ion movement in SiO2 by ion implantation
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10.1063/1.90238
/content/aip/journal/apl/33/11/10.1063/1.90238
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/11/10.1063/1.90238
/content/aip/journal/apl/33/11/10.1063/1.90238
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/content/aip/journal/apl/33/11/10.1063/1.90238
2008-08-08
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compensation of mobile‐ion movement in SiO2 by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/11/10.1063/1.90238
10.1063/1.90238
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