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A model for the large‐amplitude hysteresis in MIS structures on InSb
1.M. L. Korwin‐Pawlowski and E. L. Heasell, Phys. Status Solidi A 24, 649 (1974).
2.J. Shappir, S. Margalit, and I. Kidron, IEEE Trans. Electron Devices ED‐22, 960 (1975).
3.T. Nakagawa and H. Fujisada, Appl. Phys. Lett. 31, 5 (1977).
4.P. Rossel, H. Martinot, and D. Esteve, Solid‐State Electron. 13, 425 (1970).
5.F. P. Heiman and G. Warfield, IEEE Trans. Electron Devices ED‐12, 167 (1965).
6.M. H. White and J. R. Cricchi, IEEE Trans. Electron Devices ED‐19, 1280 (1972).
7.I. Lundstrom and C. Svenson, J. Appl. Phys. 43, 12 (1972).
8.H. C. Card, Solid‐State Electron. 18, 881 (1975).
9.In the numerical applications we shall assume the insulator is ;
9.a two‐band model is then applied (Ref. 8), and taking the effective mass of the electron (Ref. 7), it is found that
10.The assumption is made that all the traps within the insulator up to a distance X̄(t) from the interface are in equilibrium with the semiconductor. It then turns out by solving Eq. (1) and assuming is constant that (Å).
11.The calculation has been carried out by integrating in where the InSb permittivity is taken to be F and is the effective density of states in the conduction band [see H.C. Pao, PhD thesis (University of Illinois, 1966 (unpublished)]. For this purpose the assumption of complete degeneracy is made: [see J.S. Blakemore, International Series of monographs on semiconductors, 1962, Vol. 3, p. 83 (unpublished).
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