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Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency
1.W. H. Hackett, Jr., J. Appl. Phys. 43, 1649 (1972).
2.F. Berz and H. K. Kuiken, Solid‐State Electron. 19, 437 (1976).
3.J. P. McKelvey, Solid State and Semiconductor Physics (Harper and Row, New York, 1966), pp. 461–468.
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