No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Defect distribution near the surface of electron‐irradiated silicon
1.E. g., see N. B. Urli and J. W. Corbett, Radiation Effects in Semiconductors, 1976, Conf. Series No. 31 (Institute of Physics, London, 1977).
2.G. L. Miller, D. V. Lang, and L. C. Kimerling, Ann. Rev. Mater. Sci. 7, 377 (1977).
3.L. C. Kimerling, IEEE Trans. Nucl. Sci. NS‐23, 1497 (1976).
4.J. W. Walker and C. T. Sah, Phys. Rev. B 7, 4587 (1973).
5.K. L. Wang, Appl. Phys. Lett. 29, 700 (1976).
6.D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
7.G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).
8.G. D. Watkins and J. W. Corbett, Phys. Rev. 138, A543 (1965).
9.G. D. Watkins and J. W. Corbett, Phys. Rev. 134, A1359 (1964).
10.In MOS, two additional spectra, one at and another a continuous background spectrum, are observed. These defects are concentrated at the surface and their concentration decreases abruptly at a depth of 0. 5 μm inside the Si bulk. We attribute them to electron damage at the interface.
11.J. W. Corbett and G. D. Watkins, Phys. Rev. 138, A555 (1965).
12.J. A. Van Vechten, Phys. Rev. B 10, 1482 (1974).
13.J. R. Srour, IEEE Trans. Nucl. Sci. NS‐17, 118 (1970).
14.J. Kowall, D. Peak, and J. W. Corbett, Phys. Rev. B 13, 477 (1976).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month