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Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD Al x Ga1−x As‐GaAs quantum‐well heterostructures
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10.1063/1.90522
/content/aip/journal/apl/33/8/10.1063/1.90522
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/8/10.1063/1.90522
/content/aip/journal/apl/33/8/10.1063/1.90522
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/content/aip/journal/apl/33/8/10.1063/1.90522
2008-08-08
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/8/10.1063/1.90522
10.1063/1.90522
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