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Low‐current‐threshold and high‐lasing uniformity GaAs–Al x Ga1−x As double‐heterostructure lasers grown by molecular beam epitaxy
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10.1063/1.90839
/content/aip/journal/apl/34/7/10.1063/1.90839
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/7/10.1063/1.90839
/content/aip/journal/apl/34/7/10.1063/1.90839
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/content/aip/journal/apl/34/7/10.1063/1.90839
2008-08-07
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/7/10.1063/1.90839
10.1063/1.90839
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