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Vapor‐phase epitaxial growth of quaternary In1−x Ga x As y P1−y in the 0.75–1.35‐eV band‐gap range
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10.1063/1.90875
/content/aip/journal/apl/34/9/10.1063/1.90875
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/9/10.1063/1.90875
/content/aip/journal/apl/34/9/10.1063/1.90875
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/content/aip/journal/apl/34/9/10.1063/1.90875
2008-08-07
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vapor‐phase epitaxial growth of quaternary In1−xGaxAsyP1−y in the 0.75–1.35‐eV band‐gap range
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/9/10.1063/1.90875
10.1063/1.90875
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