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Oxygen partial pressure dependence of the fixed surface‐state charge Q SS due to thermal oxidation of n‐ (100) silicon
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10.1063/1.90876
/content/aip/journal/apl/34/9/10.1063/1.90876
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/9/10.1063/1.90876
/content/aip/journal/apl/34/9/10.1063/1.90876
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/content/aip/journal/apl/34/9/10.1063/1.90876
2008-08-07
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen partial pressure dependence of the fixed surface‐state charge QSS due to thermal oxidation of n‐ (100) silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/34/9/10.1063/1.90876
10.1063/1.90876
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