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The formation of Ga1−x Al x As layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions
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10.1063/1.91096
/content/aip/journal/apl/35/3/10.1063/1.91096
http://aip.metastore.ingenta.com/content/aip/journal/apl/35/3/10.1063/1.91096
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/content/aip/journal/apl/35/3/10.1063/1.91096
2008-08-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions
http://aip.metastore.ingenta.com/content/aip/journal/apl/35/3/10.1063/1.91096
10.1063/1.91096
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