Face dependence of the spin polarization of photoelectrons from NEA GaAs (100) and (110)
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8.An analysis of the yield curves of Fig. 1 applying Eq. (3.8) of Ref. 7 gives This is smaller than commercial‐grade photocathodes and probably indicates some residual contamination on the GaAs surface. The luminous sensitivity of for our cathode in Fig. 1 is lower than the sensitivity of freshly activated cathodes.
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12.As a result of high‐temperature heat cleaning, GaAs surfaces can develop (110) facets, as reported by some authors (Ref. 10) but not by others [B. Goldstein, Surf. Sci. 47, 143 (1975),
12.B. J. Stocker, Surf. Sci. 47, 501 (1975)].
12.The calculations of Burt and Inkson can obviously not explain the observed difference in polarization if our surface is facetted (110). We did not have the facility to do LEED in the source chamber to check this for our surfaces. However, the (100) surface is much more stable against faceting than the (111)B surface which is also used for photocathodes [J. E. Rowe (private communication)].
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15.The unknown number of times an electron traverses the Cs‐O layer makes it impossible to determine a spin‐exchange scattering cross section as attempted by Erbudak and Reihl. Further, their use of luminescence polarizations [G. Fishman and G. Lampel, Phys. Rev. B 16, 280 (1977)] is of questionable validity due to lifetime variation between samples. It would be of interest to measure the photoemission and luminescence polarizations on the same sample in situ; the spin polarization could be used as a parameter to give information on the emission process.
16.B. Reihl, M. Erbudak, and D. M. Campbell, Phys. Rev. B (to be published). This reference, like Ref. 6, contains statements about shortcomings of NEA GaAs for polarized electron sources which are based upon experiments on the (110) face and not applicable to the (100) face discussed here and may therefore be misleading.
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