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Extension of a theorem used in the investigation of p‐n junctions with the scanning electron microscope to arbitrary geometries and arbitrarily inhomogeneous material
1.W. Watanabe, G. Actor, and H. P. Gatos, IEEE Trans. Electron Devices ED‐24, 1172 (1977).
2.O. Von Roos, Solid‐State Electron, 21, 1069 (1978), especially Appendix A.
3.If the doping is strongly nonuniform the question arises where is the edge located? For the derivation of the theorem quoted earlier, the location of the boundary where Eq. (4b) is satisfied need not be known.
4.P. M. Morse and H. Feshbach, Methods of Theoretical Physics (McGraw‐Hill, New York, 1953), p. 869 ff.
5.Chenming Hu, IEEE Trans. Electron Devices ED‐25, 822 (1978).
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