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400‐Å high aspect‐ratio lines produced in poylmethyl methacrylate (PMMA) by ion‐beam exposure
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4.Different authors give different values for the range of ions in various photoresist materials similar to PMMA in chemical composition. Typically, at 40 keV, Gibbons et al. calculate a range of 3.5 μm in AZ111 photoresist, Northcliffe and Schilling calculate 1 μm in and Smith calculates 0.45 μm in KTFR. J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics, 2nd ed. (Dowden, Hutchinson, and Ross, Stroudsburg, Pa., 1975);
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10.R. Levi‐Setti, Scanning Electron Microscopy/1974 (Part I), Proc. 7th Annual Symp., edited by O. Johari (ITT Research Institute, Chicago, 1977), p. 125.
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