Fabrication of mesa‐type waveguides in AlGaAs structures by laser irradiation
1.I. Hayashi, M. B. Panish, and F. K. Reinhart, J. Appl. Phys. 42, 1929 (1971).
2.J. C. Tracy, W. Wiegman, R. A. Logan, and F. K. Reinhart, Appl. Phys. Lett. 22, 511 (1973).
3.R. A. Logan and F. K. Reinhart, Appl. Phys. Lett. 44, 4172 (1973).
4.F. K. Reinhart, R. A. Logan, and T. P. Lee, Appl. Phys. Lett. 24, 270 (1974).
5.E. Garmire, H. Stoll, A. Yariv, and R. G. Hunsperger, Appl. Phys. Lett. 21, 87 (1972).
6. see e.g.: J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgoni, J. A. Shelnut, and T. T. Sheng, Appl. Phys. Lett. 33, 542 (1978).
7.M. A. Afromowitz, J. Appl. Phys. 44, 1292 (1973).
8.R. Berman, Thermal conduction in solids (Clarendon, Oxford, 1976), p. 173.
9.A. Leonardt, K. Buchheiser, and G. Kuehn, Krist. Techn. 9, 200 (1974).
10.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 38–58. The results are obtained by extrapolating carrier and band‐gap data of the mixed compounds to the melting points, assuming the same temperature dependence as reported for GaAs, and assuming the carrier density to be proportional to the irradiation power. The dependences of reflectivity, absorption depth, and carrier lifetime on temperature and composition have been neglected in this estimate.
11.C. J. Glassbrenner and G. A. Slack, Phys. Rev. A 134, 1058 (1964).
12.A. R. Goodwin, D. H. Lovelace, and P. R. Selway, Opto‐electronics 4, 311 (1972).
13.T. Tsukada, H. Nakashima, J. Umeda, S. Nakamura, and N. Chinone, Appl. Phys. Lett. 20, 344 (1972).
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month