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Near‐equilibrium LPE growth of low threshold current density In1−x Ga x As y P1−y (λ=1.35 μm) DH lasers
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10.1063/1.91243
/content/aip/journal/apl/35/9/10.1063/1.91243
http://aip.metastore.ingenta.com/content/aip/journal/apl/35/9/10.1063/1.91243
/content/aip/journal/apl/35/9/10.1063/1.91243
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/content/aip/journal/apl/35/9/10.1063/1.91243
2008-08-07
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near‐equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/35/9/10.1063/1.91243
10.1063/1.91243
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