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Very low current threshold GaAs‐Al x Ga1−x As double‐heterostructure lasers grown by molecular beam epitaxy
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10.1063/1.91297
/content/aip/journal/apl/36/1/10.1063/1.91297
http://aip.metastore.ingenta.com/content/aip/journal/apl/36/1/10.1063/1.91297
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/content/aip/journal/apl/36/1/10.1063/1.91297
2008-07-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/36/1/10.1063/1.91297
10.1063/1.91297
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