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Raman scattering in superlattices: Anisotropy of polar phonons
1.P. Manuel, G. A. Sai‐Halasz, L. L. Chang, Chin‐An Chang, and L. Esaki, Phys. Rev. Lett. 37, 1701 (1976).
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10.The 14‐11 Å sample is the same referred to as TT1 in Refs. 2 and 3.
11.D. Long, Energy Bands in Semiconductors (Wiley, Interscience, New York, 1968).
12.See, for example, the chapters by A. Pinczuk and E. Burstein, and R. M. Martin and L. M. Falicov in Light Scattering in Solids, edited by M. Cardona (Springer, New York, 1975).
13.Absorption measurements at 4 K indicate an absorption edge at 1.91 eV for the 14‐11 Å sample [R. Dingle (private communication)].
14.A similar approach gives rise to optical birefringence in GaAs‐AlAs superlattices as described by J. P. van der Ziel, M. Ilegems, and R. M. Mikulyak, Appl. Phys. Lett. 28, 735 (1976).
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19.This number results by assuming the refractive index of the superlattice to be the same as for a random alloy, i.e., at Å [J. P. van der Ziel and A. Gossard, J. Appl. Phys. 48, 3018 (1977)]. The upper limit of 0.5% corresponds to a transparent layered sample.
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23.Breakdown of wave‐vector conservation was reported for n‐GaAs in resonance with the gap by A. Pinczuk, G. Abstreiter, R. Trommer, and M. Cardona, Solid State Commun. 30, 429 (1979).
24.This is manifested by the appearance of the phonons in the forbidden scattering configuration.
25.At 4 K we actually see a peak which only appears in the forbidden geometry.
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