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Primary defects in low‐fluence ion‐implanted silicon
1.G. D. Watkins and J. W. Corbett, Phys. Rev. A 138, 1359 (1964), and the references therein.
2.D. V. Lang, J. Appl. Phys. 45, 3023 (1974);
2.G. L. Miller, D. V. Lang, and L. C. Kimerling, Ann. Rev. Mater. Sci. 7, 377 (1977).
3.L. C. Kimerling, in Radiation Effects in Semiconductors, edited by N. B. Urli and J. W. Corbett (Institute of Physics, London, 1977).
4.L. C. Kimerling and J. M. Poate, in Lattice Defects in Semiconductors (Institute of Physics, London, 1975), p. 26;
4.K. L. Brower and W. Beezhold, J. Appl. Phys. 43, 8 (1972).
5.K. L. Wang, Appl. Phys. Lett. 29, 700 (1976).
6.For example, see D. M. Brown, R. J. Connery, and P. V. Gray, J. Electrochem. Soc. 122, 121 (1975).
7.L. C. Kimerling (private communication).
8.Y. H. Lee and J. W. Corbett (private communication).
9.W. K. Chu, R. H. Kastl, R. F. Lever, S. Mader, and B. J. Masters, Phys. Rev. B 16, 3851 (1977).
10.J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors (Academic, New York, 1970), p. 72.
11.D. K. Brice, Ion Implantation Range and Energy Deposition Distributions, (Plenum, New York, 1975), Vol. 1.
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