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Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor
1.I. Ladany, J. J. Wolkstein, D. Botez, R. S. Crandall, B. R. Dornan, D. R. Patterson, and B. E. Tompkins, IEEE Int. Electron Devices Meeting Technical Digest, Washington, 1978, p. 630 (unpublished).
2.I. Ury, S. Margalit, M. Yust, and A. Yariv, Appl. Phys. Lett. 34, 430 (1979).
3.Y. Honma, H. Nozawa, and S. Harada, in Ref. 1.
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