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Stress‐relieved regrowth of silicon on sapphire by laser annealing
1.For a general review, see, for example, Y. Nishi and H. Hara, Jpn. J. Appl. Phys. 17, 27 (1978).
2.J. Hynecek, J. Appl. Phys. 45, 2631 (1974).
3.F. F. Fang (unpublished).
4.See, for example, Strength and Deformation in Nonuniform Temperature Fields, edited by Ya. B. Fridman (Consultant Bureau, New York, 1964).
5.There is difference in the strain between the  and  directions, but for the present purposes we neglect this nonuniformity.
6.E. Anastassakis, A. Pinczuk, E. Burstein, F. H. Pollak, and M. Cardona, Solid State Commun. 8, 133 (1970).
7.J. W. Mayer, P. Revesz, J. Gyulai, J. Roth, and T. W. Sigmon, Appl. Phys. Lett. 34, 76 (1979).
8.Samples supplied by Union Carbide Corp.
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