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On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems
1.R. S. Bauer and J. C. McMenamin, J. Vac. Sci. Technol. 15, 1444 (1978).
2.K. J. Polasko and H. Kroemer (unpublished). The most essential growth parameters were as follows: substrate temperature 350–500 °C, Ga flux We do not know to what extent these conditions are important for good (110) morphology.
3.S. Wright and H. Kroemer (unpublished).
4.W. A. Harrison, E. A. Kraut, J. R. Waldrop, and R. W. Grant, Phys. Rev. B 18, 4402 (1978).
5.W. A. Harrison, Surf. Sci. 55, 1 (1976).
6.For a recent review, see C. B. Duke, CRC Crit. Rev. Solid State Mater. Sci. 8, 69 (1978).
7.K. Morizane, J. Cryst. Growth 38, 249 (1977).
8.J. C. C. Fan, C. O. Bozler, and B. J. Palm, Appl. Phys. Lett. 35, 875 (1979).
9.D. L. Miller (private communication).
10.T. Gabor, J. Electrochem. Soc. 111, 817, 821 (1964).
11.F. Jona, IBM J. Res. Dev. 9, 375 (1965).
12.B. Z. Olshanetsky, S. M. Repinsky, and A. A. Shklyaev, Surf. Sci. 64, 224 (1977);
12.B. Z. Olshanetsky and A. A. Shklyaev, Surf. Sci. 67, 581 (1977)., Surf. Sci.
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