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GaAs‐Al x Ga1−x As buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement
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10.1063/1.91648
/content/aip/journal/apl/36/9/10.1063/1.91648
http://aip.metastore.ingenta.com/content/aip/journal/apl/36/9/10.1063/1.91648
/content/aip/journal/apl/36/9/10.1063/1.91648
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/content/aip/journal/apl/36/9/10.1063/1.91648
2008-07-23
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement
http://aip.metastore.ingenta.com/content/aip/journal/apl/36/9/10.1063/1.91648
10.1063/1.91648
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