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Comparison of solar cell performance to calculations using different energy band‐gap narrowing models
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9.The device code is a modified version of one written by Dr. T. I. Chappell which was based on work described in D. L. Sharfetter and H. K. Gummel, IEEE Trans. Electron. Devices ED‐16, 64 (1969).
10.The definitions of integrals, etc., in this letter are taken from Ref. 12. There is a factor of 2 difference for the quantities in the Einstein ratio between Refs. 11 and 12.
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12.V. I. Fistul, Heavily Doped Semiconductors (Prenum, New York, 1969), p 51.
13.For highly doped surfaces, the calculations are insensitive to surface recombination velocity s for The high QE in Table I strongly suggest that s is in this low range.
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