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Scanned electron beam annealing of arsenic‐implanted silicon
1.A. C. Greenwald, A. R. Kirkpatrick, R. G. Little, and J. A. Minnucci, J. Appl. Phys. 50, 783 (1979).
2.R. 1. McMahon and H. Ahmed, Electron. Lett. 15, 47 (1979).
3.J. L. Regolini, J. F. Gibbons, T. W. Sigmon, R. F. W. Pease, T. J. Magee, and J. Peng, Appl. Phys. Lett. 34, 410 (1979).
4.L. Csepregi, E. F. Kennedy, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 49, 3906 (1978).
5.After submission of the manuscript, the following paper was brought to our attention by the reviewer, in which basically the same result was obtained by another method of analysis: R. A. McMahon, H. Ahmed, R. M. Dobson, and J. D. Speight, Electron. Lett. 16, 295 (1980).
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