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Arsenic stabilization of InP substrates for growth of Ga x In1−x As layers by molecular beam epitaxy
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10.1063/1.91910
/content/aip/journal/apl/37/3/10.1063/1.91910
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/3/10.1063/1.91910
/content/aip/journal/apl/37/3/10.1063/1.91910
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/content/aip/journal/apl/37/3/10.1063/1.91910
2008-07-22
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/3/10.1063/1.91910
10.1063/1.91910
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