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Arsenic stabilization of InP substrates for growth of Ga x In1−x As layers by molecular beam epitaxy
1.B. I. Miller and J. H. McFee, J. Electrochem. Soc. 125, 1311 (1978).
2.H. Asahi, H. Okamoto, M. Ikeda, and Y. Kawamura, Jpn. J. Appl. Phys. 18, 565 (1979).
3.R. F. C. Farrow, J. Phys. D. 8, L87 (1975).
4.R. F. C. Farrow (private communication).
5.J. Massies, presented at the Anglo‐French Meeting on MBE, Malvern 1977 (unpublished).
6.C. T. Foxon and B. A. Joyce, J. Cryst. Growth 44, 75 (1978).
7.M. T. Norris, Appl. Phys. Lett. 36, 833 (1980).
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