No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing
1.Proceedings, Laser Effects in Ion Implanted Semiconductors, Catania, 1978, edited by E. Rimini (University of Catania, Catania, 1979).
2.A. R. Kirkpatrick, R. G. Little, A. C. Greenwald, and J. A. Minnucci, in Ref. l,p. 232.
3.T. Hussain and G. Linker, Nucl. Instrum. Methods 168, 317 (1980).
4.J. Geerk and F. Ratzel, KfK Report No. 2912 (unpublished, 1979).
5.A. C. Greenwald, A. R. Kirkpatrick, R. G. Little, and J. A. Minnucci, J. Appl. Phys. 50, 783 (1979).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month