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Studies of steam‐oxidized WSi2 by Auger sputter profiling
1.S. Zirinsky, W. Hammer, F. D’Heurle, and J. Baglin, Appl. Phys. Lett. 33, 76 (1978).
2.F. Mohammadi, K. C. Saraswat, and J. D. Meindl, Appl. Phys. Lett. 35, 529 (1979).
3.J. S. Johannessen, C. R. Helms, W. E. Spicer, and Y. E. Strausser, IEEE Trans. Electron. Devices ED‐24, 547 (1977).
4.J. S. Johannessen, W. E. Spicer, and Y. E. Strausser, J. Appl. Phys. 47, 3028 (1976).
5.F. Mohammadi, T. W. Sigmon, and K. C. Saraswat (unpublished).
6.The measured interface width for both structures is 725 Å. By profiling samples with varying oxide thickness and assuming that the actual interface widths were unchanged, we obtain a sputter‐induced broadening of where D is the oxide thickness. The actual interface width and the measured interface width are then related by This gives an actual interface width of 407 Å for both structures.
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