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Studies of steam‐oxidized WSi2 by Auger sputter profiling
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6.The measured interface width for both structures is 725 Å. By profiling samples with varying oxide thickness and assuming that the actual interface widths were unchanged, we obtain a sputter‐induced broadening of where D is the oxide thickness. The actual interface width and the measured interface width are then related by This gives an actual interface width of 407 Å for both structures.
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