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In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling
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13.Note that for sample A the depletion region extends to the interface at the highest voltages. However, the role played by the interface would appear to be minimal since the applied field in this region is much less than Thus it is unlikely that the same value of θ would be obtained for both samples A and B, where the depletion region in the latter sample is never nearer than to the interface at even the highest voltages. See, for example, A. G. Milnes and D. L. Feucht, Heterojunctions and Metal‐Semiconductor Junctions (Academic, New York, 1972).
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