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Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress
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10.1063/1.92003
/content/aip/journal/apl/37/7/10.1063/1.92003
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/7/10.1063/1.92003
/content/aip/journal/apl/37/7/10.1063/1.92003
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/content/aip/journal/apl/37/7/10.1063/1.92003
2008-07-23
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/7/10.1063/1.92003
10.1063/1.92003
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