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High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface
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10.1063/1.92088
/content/aip/journal/apl/37/9/10.1063/1.92088
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/9/10.1063/1.92088
/content/aip/journal/apl/37/9/10.1063/1.92088
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/content/aip/journal/apl/37/9/10.1063/1.92088
2008-07-23
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/37/9/10.1063/1.92088
10.1063/1.92088
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