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Luminescence properties of GaAs‐Ga1−x Al x As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
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12.We must stress here that this level assignment is somewhat tentative. To our knowledge, no study of the low‐temperature PL of undoped DH has been made. The 1.513‐eV line corresponds to the line of single layers, but we cannot disregard the possibility that in the DH, a high‐density regime is attained at much lower excitation intensities than in single layers, due to confinement effects. In that case, the 1.513‐eV line would correspond to an e‐h plasma line [see O. Hildebrandt et al., Phys. Rev. B 17, 4775 (1978) and references therein]. In any case, the conclusions of the present letter are not dependent on the precise line assignment.
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