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Photoluminescence technique for the determination of minority‐carrier diffusion length in GaAs grown by molecular beam epitaxy
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13.The value of SRV of used as the value appropriate to the interface between an epitaxial film and a Cr‐doped substrate relies on the minority‐carrier (electron) lifetime in GaAs:Cr being less than 1 nsec [R. J. Nelson and R. G. Sobers, J. Appl. Phys. 49, 6103 (1979)].
13.An effective diffusion velocity S for minority carriers in GaAs:Cr can be derived via the relation with D determined from the Einstein relation Look [D. C. Look, J. Appl. Phys. 48, 5141 (1977)] gives minority‐carrier mobilities in GaAs:Cr at around sec from which S is derived to be close to
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