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Influence of carrier diffusion on melt‐front penetration during pulsed‐laser annealing
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9.In the author’s opinion, many of the assumptions made by Yoffa in obtaining the parameters α tend to overestimate its value. For example, although the absorption coefficient chosen is appropriate for amorphous silicon, virtually all other quantities such as carrier diffusion coefficients, effective masses, etc., are appropriate to crystalline silicon near room temperature and at low carrier densities.
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