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Luminescence investigations of laser‐annealed Si
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12.With the application of uniaxial stress to single‐crystal Si, shifts and splitting of the bound exciton luminescence lines have been reported (Refs. 9 and 11). However, the stress resulting in laser‐annealed crystals is different from these uniaxial stress experiments in several respects. In the first place, the geometry is different; a one‐dimensional contraction or expansion has been measured in the case of pulsed‐laser annealing because of the fixed amorphous layer on the single crystal substrate [(b) B. R. Appleton, B. C. Larson, C. W. White, J. Narayan, S. R. Wilson, and P. P. Pronko, AIP Conf. Proc. 50, 291 (1979)].
12.Furthermore, laser‐annealed material is expected to have spatially inhomogeneous strain because of variations in the way energy is deposited into the sample from the laser. For these reasons, we have not made a detailed calculation, but instead have used a first‐order approximation to correlate our measured values of peak shift with the results reported in the literature, in order to estimate the residual strain. Comparison was made with the value of the peak shift measured here (0.2 meV) with published data (Refs. 9 and 11) in order to deduce the residual stress (10 MPa), and the lattice displacement was then calculated by the use of known elastic constants [(a) H. J. McSkimin, J. Appl. Phys. 24, 988 (1953)] at This estimate is certainly correct to within an order of magnitude.
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