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Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
1.See, for example, Amorphous Semiconductors, edited by M. H. Brodsky (Springer, Heidelberg, 1979).
2.J. C. Knights, G. Lucovsky, and R. J. Nemanich, Philos. Mag. B 37, 467 (1978).
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5.M. A. Ring, “Kinetics of Polysilane Decompositions” in Homoatomic Rings, Chains and Macromolecules of Main Group Elements, edited by A. Rheingold (Elsevier, New York, 1977).
6.F. C. Eversteijn, Philips Res. Rep. 26, 134 (1971).
7.As subsequently discussed, a dependence of rate on substrate temperature becomes important only for
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13.N. Sol, D. Kaplan, D. Dieumegard, and D. Dubreuil, J. Non‐Cryst. Solids 35/36, 291 (1980).
14.H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. Demond, and S. Kalbitzer, Phys. Status Solidi (B) 100, 43 (1980).
15.For the purpose of comparison with glow discharge‐prepared material we interpret the IR frequencies in the conventional manner. Since there is increasing evidence that the “dihydride” stretch at may have other contributions [Ref. 14; also W. Paul, Solid State Commun. 34, 283 (1980)], our assignments should be considered tentative.
16.In high power plasmas smaller fragments such as SiH and atomic Si may be present, which can also insert into surface Si‐H bonds.
17.J. C. Knights, Jpn. J. Appl. Phys. 18, Suppl. 18‐1, 101‐8 (1979).
18.J. Reimer, R. W. Vaughan, and J. C. Knights, Phys. Rev. Lett. 44, 193 (1980).
19.J. Reimer, R. W. Vaughan, and J. C. Knights, Phys. Rev. B (to be published).
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