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A gallium phosphide high‐temperature bipolar junction transistor
1.R. J. Chaffin and L. R. Dawson, Proceedings of the 1981 Conference on High‐Temperature Electronics (IEEE, New York, 1981), pp. 55–58.
2.For a recent review of applications of high‐temperature electronics, see all papers, Session I, Proceedings of the 1981 Conference on High‐Temperature Electronics (IEEE, New York, 1981).
3.M. Hatzakis, B. J. Canavello, and J. M. Shaw, IBM J. Research 24, 452 (1980).
4.R. J. Chaffin, Sandia Report SAND80‐1763, August 1980.
5.P. E. Grey, D. DeWitt, A. R. Boothroyd, and J. F. Gibbons, Physical Electronics and Circuit Models of Transistors, SEEC Vol. 2 (Wiley, New York, 1964), pp. 155–162.
6.I. J. Fritz (unpublished).
7.P. L. Gourley and L. R. Dawson, Bull. Am. Phys. Soc. 26, 457 (1981).
8.H. Strack, Electronics, November 13, 1967, pp. 119–122.
9.O. Eknoyan, W. van der Hoeven, T. Richardson, W. A. Porter, and J. A. Coquat, Materials Research Society Proceedings, Vol. 1 (Elsevier, North Holland, 1981).
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