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n‐channel deep‐depletion metal‐oxide‐semiconductor field‐effect transistors fabricated in zone‐melting‐recrystallized polycrystalline Si films on SiO2
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10.1063/1.92603
/content/aip/journal/apl/39/11/10.1063/1.92603
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/11/10.1063/1.92603
/content/aip/journal/apl/39/11/10.1063/1.92603
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/content/aip/journal/apl/39/11/10.1063/1.92603
1981-12-01
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n‐channel deep‐depletion metal‐oxide‐semiconductor field‐effect transistors fabricated in zone‐melting‐recrystallized polycrystalline Si films on SiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/11/10.1063/1.92603
10.1063/1.92603
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