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Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification
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10.1063/1.92794
/content/aip/journal/apl/39/7/10.1063/1.92794
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/7/10.1063/1.92794
/content/aip/journal/apl/39/7/10.1063/1.92794
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/content/aip/journal/apl/39/7/10.1063/1.92794
1981-10-01
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/7/10.1063/1.92794
10.1063/1.92794
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