Velocity field characteristics of minority carriers (electrons) in p‐In0.53Ga0.47As
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8.Unintentionally doped As grown by liquid phase epitaxy is typically n type with for the conditions of growth we have used in preparing these intentionally doped p‐type layers.
9.We attribute this slow response to trapped carriers with the fraction of initial carrier contributing to this signal increasing with d as a larger volume of sample is swept out. To minimize the influence of traps on the free carrier (fast) response, a cw laser with output power was focused onto the sample to provide a steady source of carriers to fill the trap states.
10.We have observed Gunn instabilities in n‐type As at fields close to those cited in Ref. 5. Additional measurements have also indicated the absence of transferred electron effect in p‐type material.
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12.The authors would like to thank K. K. Thornber for pointing out the relationship between the saturated drift velocity and the L 0 phonon energy.
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