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Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures
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10.1063/1.92821
/content/aip/journal/apl/39/8/10.1063/1.92821
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/8/10.1063/1.92821
/content/aip/journal/apl/39/8/10.1063/1.92821
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/content/aip/journal/apl/39/8/10.1063/1.92821
1981-10-15
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/8/10.1063/1.92821
10.1063/1.92821
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