Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures
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14.Although all films were grown under the same system leak rate, evidenc of Si‐0 vibrations, from infrared vibrational data, occurs only for the low‐hydrogen content films. This suggests that the films oxidize more readily when they are not fully hydrogenated. We speculate tha the oxidation rate of the free surface would also be higher for films with low‐hydrogen content.
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