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Hot‐carrier effects in 1.3‐μ In1−x Ga x As y P1−y light emitting diodes
1.R. C. Goodfellow, A. C. Carter, I. Griffiths, and S. Hersec, talk presented at 1979 Device Research Conf., Cornell University 1979 (unpublished).
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7.Luminescence intensity for a Maxwellian carrier distribution at temperature is given by where is the band gap and is the absorption coefficient (see Ref. 9). Since the slope of the measured spectrum corresponds to at low intensities, we assume that the reabsorption correction and the correction due to variation of nearly cancel each other and that the slope of the measured spectrum gives at any intensity. Corrections due to band‐filling effects are negligible in our case because the slopes were measured several above the chemical potential.
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10.Jagdeep Shah, R. F. Leheny, R. E. Nahory, and M. A. Pollack, Appl. Phys. Lett. 37, 475 (1980).
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