Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Energy levels and solubility of interstitial chromium in silicon
1.G. G. De Leo, G. D. Watkins, and W. B. Fowler, Phys. Rev. B. 23 (4), 1851 (1981).
2.D. L. Partin, J. W. Chen, A. G. Milnes, and L. F. Vassamillet, Solid State Elec. 22 (5), 455 (1979).
3.H. H. Woodbury and G. H. Ludwig, Phys. Rev. 117, 102 (1960).
4.A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973), p. 14.
5.A. Goetzberger, E. Klausmann, M. S. Schulz, CRC, C. R. Sol. 6 (1) (1976).
6.L. C. Kimerling, J. L. Benton, and J. J. Rubin “Defects and Radiation Effects in Semiconductors 1980,” Inst. Phys. Conf. Ser. (in press).
7.K. Graff and H. Pieper, Semiconductor Silicon 1981, edited by H. R. Huff and R. J. Kriegler (The Electrochemical Society, N.J., 1981), p. 331.
8.H. Feichtinger, “Defects and Radiation Effects in Semiconductors 1978,” Inst. Phys. Conf. Ser. 46, p. 528 (1979).
9.H. Feichtinger, S. Waltl, and A. Gschwandtner, Solid State Commun. 27, 667 (1978).
10.C. B. Collins, R. O. Carlson, and C. S. Gallagher, Phys. Rev. 105, 1168 (1957).
11.Y. H. Lee, R. L. Kleinhenz, and S. W. Corbett, “Defect and Radiation Effects in Semiconductors 1978,” Inst. Phys. Conf. Ser. 46, p. 521 (1979).
Article metrics loading...