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Electrical properties of single‐crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy
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10.1063/1.92857
/content/aip/journal/apl/39/9/10.1063/1.92857
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/9/10.1063/1.92857
/content/aip/journal/apl/39/9/10.1063/1.92857
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/content/aip/journal/apl/39/9/10.1063/1.92857
1981-11-01
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of single‐crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/39/9/10.1063/1.92857
10.1063/1.92857
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