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EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES
1.Work performed at Bell Telephone Laboratories.
2.C. A. Mead and W. G. Spitzer, Phys. Rev. Letters 10, 471 (1963).
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5.The points for the heating cycle in Fig. 2 do not approach equilibrium values near because the heater employed would have produced an equilibrium temperature of about
6.S. M. Sze, C. R. Crowell, and D. Kahng (to be published).
7.R. J. Archer and M. M. Atalla, Ann. N.Y. Acad. Sci. 101 (Clean Surfaces), Art. 3 (1963).
8.D. Kahng, Solid‐State Electron. 6, 281 (1963).
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