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EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON
1.This device in the form shown in Fig. 1 was first described by K. Kahng and M. M. Atalla at the IRE‐AIEE Solid State Device Res. Conf., Pittsburgh, Pa., June, 1960. The original idea is contained in W. Shockley and G. L. Pearson, Phys. Rev. 74, 232 (1948).
2.J. R. Schrieffer, Phys. Rev. 97, 641 (1955).
3.See, for example, P. K. Weimer, Proc. IRE 50, 1462 (1962).
4.This has been directly verified recently by A. B. Fowler and F. F. Fang in a field effect surface Hall measurement (to be published).
5.For a more complete discussion of the behavior of the structure see L. M. Terman, Solid‐State Electron. 5, 285 (1962),
5.and R. Lindner, Bell System Tech. J. 41, 803 (1962).
6.The complete result is given by which reduces to Eq. (5) for
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