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EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON
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10.1063/1.1754005
/content/aip/journal/apl/4/8/10.1063/1.1754005
http://aip.metastore.ingenta.com/content/aip/journal/apl/4/8/10.1063/1.1754005
/content/aip/journal/apl/4/8/10.1063/1.1754005
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/content/aip/journal/apl/4/8/10.1063/1.1754005
2004-12-23
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON
http://aip.metastore.ingenta.com/content/aip/journal/apl/4/8/10.1063/1.1754005
10.1063/1.1754005
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