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Interface recombination and carrier confinement at a GaAs/Ga x In1−x P double heterojunction studied by picosecond population modulation spectroscopy
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10.1063/1.92935
/content/aip/journal/apl/40/10/10.1063/1.92935
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/10/10.1063/1.92935
/content/aip/journal/apl/40/10/10.1063/1.92935
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/content/aip/journal/apl/40/10/10.1063/1.92935
1982-05-15
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface recombination and carrier confinement at a GaAs/GaxIn1−xP double heterojunction studied by picosecond population modulation spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/10/10.1063/1.92935
10.1063/1.92935
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