1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of substrate temperature on the mobility of modulation‐doped Al x Ga1−x As/GaAs heterostructures grown by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.93096
/content/aip/journal/apl/40/5/10.1063/1.93096
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93096
/content/aip/journal/apl/40/5/10.1063/1.93096
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/40/5/10.1063/1.93096
1982-03-01
2014-08-02
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93096
10.1063/1.93096
SEARCH_EXPAND_ITEM