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Confinement of laser‐generated carriers in semiconductors by induced lattice temperature gradients
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10.1063/1.93111
/content/aip/journal/apl/40/5/10.1063/1.93111
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93111
/content/aip/journal/apl/40/5/10.1063/1.93111
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/content/aip/journal/apl/40/5/10.1063/1.93111
1982-03-01
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Confinement of laser‐generated carriers in semiconductors by induced lattice temperature gradients
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93111
10.1063/1.93111
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