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Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p +‐Ga0.47In0.53As layer grown by molecular beam epitaxy
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10.1063/1.93117
/content/aip/journal/apl/40/5/10.1063/1.93117
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93117
/content/aip/journal/apl/40/5/10.1063/1.93117
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/content/aip/journal/apl/40/5/10.1063/1.93117
1982-03-01
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p+‐Ga0.47In0.53As layer grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/40/5/10.1063/1.93117
10.1063/1.93117
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