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Characterization of high purity GaAs grown by molecular beam epitaxy
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18.The uncertainty results from the accuracy of the absolute field calibration of
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22.D. V. Langhas recently made DLTS measurements on the high purity n‐type MBE samples discussed here and finds essentially the same deep electron trap spectrum and concentration (low concentration range) as measured in much earlier MBE samples [(see Fig. 2) J. Appl. Phys. 47, 2558 (1976)]. Therefore, the improvement in transport properties reported here is apparently not due to a reduction in the concentration of deep electron traps.
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