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Oxygen precipitation effects on Si n +‐p junction leakage behavior
1.G. T. Rozgonyi and C. W. Pearce, Appl. Phys. Lett. 32, 1 (1978).
2.L. Y. Tan, L. L. Wu, and W. K. Tice, Appl. Phys. Lett. 29, 765 (1976).
3.C. W. Pearce and G. A. Rozgonyi, in Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl (Electrochemical Society, Pennington, New Jersey, 1977), p. 606.
4.C. W. Pearce, L. E. Katz, and T. E. Seidel, in Semiconductor Silicon 1981, edited by H. R. Huff, R. J. Kriegler, and Y. R. Takeishi (Electrochemical Society, Pennington, New Jersey, 1981), p. 713.
5.M. Ogino, T. Usami, and M. Watanabe, Abstract No. 435, Vol. 80‐2, The Electrochemical Society Fall Meeting, Hollywood, FL 1980.
6.T. C. May and M. H. Woods, IEEE Trans. Electron. Devices ED‐26, 2 (1979).
7.P. Chye, M. Tavel, and T. Chappell (private communication).
8.Annual Book of ASTM Standards, American Society for Testing Materials, Philadelphia (1977).
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